Please use this identifier to cite or link to this item: https://hdl.handle.net/2440/132352
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dc.contributor.authorFu, H.-
dc.contributor.authorGoodrich, J.C.-
dc.contributor.authorTansu, N.-
dc.date.issued2020-
dc.identifier.citationProceedings of the 2020 IEEE Photonics Conference (IPC), 2020, pp.1-2-
dc.identifier.isbn9781728158914-
dc.identifier.issn2374-0140-
dc.identifier.issn2575-274X-
dc.identifier.urihttps://hdl.handle.net/2440/132352-
dc.descriptionAnnual Conference of the IEEE Photonics Society (IPC)-
dc.description.abstractThe natural band alignment of nearly lattice-matched ScAlN/GaN heterojunction is investigated by Density Functional Theory (DFT) with local density approximation (LDA). A type-I ScAlN / GaN heterostructure with large band offsets is suggested for future implementation in GaN-based quantum wells (QWs).-
dc.description.statementofresponsibilityHanlin Fu, Justin C. Goodrich, and Nelson Tansu-
dc.language.isoen-
dc.publisherIEEE-
dc.relation.ispartofseriesIEEE Photonics Conference-
dc.rights©2020 IEEE-
dc.source.urihttps://ieeexplore.ieee.org/xpl/conhome/9252189/proceeding-
dc.titleBand alignment of nearly lattice-matched ScAlN/GaN heterojunction-
dc.typeConference paper-
dc.contributor.conferenceIEEE Photonics Conference (IPC) (28 Sep 2020 - 1 Oct 2020 : virtual online)-
dc.identifier.doi10.1109/IPC47351.2020.9252472-
dc.publisher.placeonline-
pubs.publication-statusPublished-
dc.identifier.orcidTansu, N. [0000-0002-3811-9125]-
Appears in Collections:Electrical and Electronic Engineering publications

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